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https://www.mrs.org/63rd-emc/awards/student-award-winners Jon is a 5th year PhD candidate in ECE, studying MBE growth and transport of Ga2O3 and related alloys. He is a 2019 recipient of the NSF Graduate Research Fellowship (GRFP) and a 2021 recipient of the German...

For contributions to GaN high-electron-mobility transistors. https://www.ieee.org/content/dam/ieee-org/ieee/web/org/about/fellows/2022-ieee-fellows-class.pdf  

Each year, Clarivate™ identifies the world’s most influential researchers ─ the select few who have been most frequently cited by their peers over the last decade. In 2021, fewer than 6,700, or about 0.1%, of the world's researchers, in 21 research fields and across...

Phillip is graduating with a PhD in Applied Engineering Physics (AEP) at Cornell in December 2021, and joining Lam Research.  The previous accolades of Phillip's at Cornell include NSF Graduate Research Fellowship (2017-2021), the Japan Society for the Promotion of...

The Gulf Coast Undergraduate Research Symposium (GCURS) is hosted annually by Rice University. GCURS provides current undergraduates the opportunity to present their original research discoveries to scholars from around the world. https://gcurs.rice.edu

America, China, India, Iran, Japan, Korea, Netherlands, Peru, Russia, South Africa, Taiwan, Vietnam.

NextGen Professors is a career-development program focused on preparing Cornell graduate students and postdocs for faculty careers across institutional types.

Austin Hickman was recognized as a Domer Dozen recipient, an award given by the University of Notre Dame Alumni Association to 12 young alumni who have made significant contributions in the areas of faith, learning, service, or work. Austin was recognized on Notre...

Jon shows how to achieve thermally stable alpha-phase Ga2O3 and AlGaO. Celesta shows gamma phase is nearly ubiquitously present in beta-Ga2O3 in the presence of high level of dopants or nucleation layers - a tricky phase that can be easily confused with certain...

Congrats to both Austin Hickman and Devansh Saraswat!  They were selected as the banner bearers of the Graduate School and marshaled in the 2021 Cornell Commencement event.  Austin appears at 1:10 and Devansh appears at 1:50.

This award is based on our seminal contributions to the p-channel FETs in wide bandgap semiconductors.  Sam Bader, Reet Chaudhuri, Kazuki Nomoto, Austin Hickman, Hyunjea Lee are key contributors along with Prof. Al Molnar's group!...

A resistivity as low as 7.5 mohm-cm is achieved on Al0.6GaN.  More can be found on Al0.6-1.0GaN in https://doi.org/10.1063/5.0037079

Publication in Science Advances: https://doi.org/10.1126/sciadv.abf1388 Cornell Chronicle: https://news.cornell.edu/stories/2021/02/researchers-create-beautiful-marriage-quantum-enemies  

http://www.ssdm.jp the SSDM2021 Young Researcher Award. This award is given to the outstanding papers presented at the previous year’s conference, authored by young researchers aged 33 years old or younger.

https://www.ieeesisc.org This year's SISC will continue the tradition of presenting an award memorializing Prof. E. H. Nicollian. The award will be given for the best student presentation. Ed Nicollian was a pioneer in the exploration of metal oxide semiconductor...

Wenshen has been a runner up at a number of international conferences in the past few years.  We are glad for Wenshen's winning of an EMC Student Award!  By the time of graduation, Wenshen published 10 first-authored journal papers including 6 featured articles, and 8...

Ideal Schottky barrier diode is an extremely well studied topic in the past 70 years!  What's new in Wenshen's discovery in 2020?  It turned out that the carrier transport region dominated by both thermionic emission and tunneling is relatively murky.  Wenshen...

Austin and Reet, currently in their final year to their PhD degree, have credited the Commercialization Fellow program, the NSF I-Corp program, the Scale Up and Prototyping program, the CTAM (now IGNITE) program, the Praxis Center for Venture Development and other...

These p-channel GaN FETs boast a current density of >420 mA/mm and a speed of ~20 GHz.  For the first time, it is possible to design a circuit with hole-conducting transistor in GaN!  The secret ingredient lies in the "high-mobility" 2D hole gas generated by the...

https://recognition.webofscience.com/awards/highly-cited/2020/ 

"The path that leads to the next generation of high-power electronics is not long. But it needs to be wide. Very wide."  Cornell Chronicle article Publication in Science Advances: Crystal orientation dedicated epitaxy of ultra wide bandgap 5.4-8.6 eV a-(AlGa)2O3 on...

https://mtt.org/students/

Combined, the Jena-Xing group published over 35+ peer-reviewed articles this year!

Prof. Xing is elected as a Fellow of the American Physical Society. https://news.cornell.edu/stories/2019/09/three-faculty-elected-fellows-american-physical-society    

Reet and Sam report the first hole doping arising from symmetry breaking in GaN/AlN without impurity dopants.  This phenomenon was first predicted by Cornell researchers about 20 years ago.  The hunt for this hole gas is finally over; more fundamental physics and...