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This award is based on our seminal contributions to the p-channel FETs in wide bandgap semiconductors. Sam Bader, Reet Chaudhuri, Kazuki Nomoto, Austin Hickman, Hyunjea Lee are key contributors along with Prof. Al Molnar's group!...
A resistivity as low as 7.5 mohm-cm is achieved on Al0.6GaN. More can be found on Al0.6-1.0GaN in https://doi.org/10.1063/5.0037079
Publication in Science Advances: https://doi.org/10.1126/sciadv.abf1388 Cornell Chronicle: https://news.cornell.edu/stories/2021/02/researchers-create-beautiful-marriage-quantum-enemies
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The central research theme in our group is to develop electronic grade semiconductors and understand the fundamental limits of these materials and their applications. The essential scientific tools our group uses include epitaxy, basic material characterizations, transport theory and experiments, device theory and experiments.