Research
The central research theme in our group is to develop electronic grade semiconductors and understand the fundamental limits of these materials and their applications. The essential scientific tools our group uses include epitaxy, basic material characterizations, transport theory and experiments, device theory and experiments. Typically speaking, a PhD graduate from our group can be a theorist but with a mindset and immersive training to collaborate closely with experimentalists; a PhD graduate from our group can be an experimentalist but with at least 20% of the thesis dedicated to theory of materials or transport or devices.
Our current research can be loosely grouped into the following areas: AlN, BN, Ga2O3, other nitrides and oxides such as superconductors, ferroelectrics and magnetics, in terms of mateirals; milimeter-wave electronics, power electronics, light emitting devices, DUV, non-linear optical properties in engineered materials, memory in terms of applications. Previous research topics include: nanowires, wafer bonding, steep transistors, conventional III-Vs, graphene and 2-D crystals.
Some current and past research projects are showcased below. As this website is under construction, also check out Prof. Debdeep Jena’s website with a lot of essential information to be yet integrated to this site.
Electronics
Representative publications
- Publications resulted from the JUMP ComSenTer project (AlN RF electronics):
- Austin Hickman et al., @J-EDS 2020; First RF power operation of AlN/GaN/AlN HEMTs with >3 A/mm and 3 W/mm at 10 GHz
- under construction
- Publications resulted from the AFRL-Cornell ACCESS project (Ga2O3 power electronics):
- Wenshen Li et al @ IEDM 2019; Single and multi-fin normally-off Ga2O3 vertical transistors with a breakdown voltage over 2.6 kV
- under construction
- Publications resulted from the Intel-Cornell-MIT p-channel project (hole-channel transistors):
- Kazuki Nomoto et al., @IEDM 2020; record performance AlN/GaN p-channel HFETs with Imax ~ 420 mA/mm and ~ 20 GHz fT/fMAX
- under construction
- Publications resulted from the ARPAe-SWITCHES project (GaN power electronics):
- Dr. Xing, invited talk at DRC 2015 on how to harness polarization in GaN for power electronics. Abstract [PDF] Presentation [PDF]
- Kazuki Nomoto et al, GaN avalanche p-n diodes from 1kV to 3.4 kV: Document #1 [PDF] Document #2 [PDF]
- Zongyang Hu et al, ideal GaN p-n junctions with record figure-of-merit of 16 GW/cm2
- Bo Song et al, ultra-low leakage in AlGaN-on-Si HEMTs: mechanisms and behavior
- Mingda Zhu et al, 1.9 GaN Schottky barrier diodes on Si
- Publications resulted from the DARPA-NEXT project (GaN RF electronics):
- Dr. Xing, invited talk at IWN 2012, Powerpoint Presentation: Can GaN HEMTs reach 1 THz?
- Dr. Xing, invited talk at TWHM 2011 Abstract, Powerpoint Presentation
- Jia Guo et al., The problem of ohmic contacts to GaN HEMTs has been solved using ohmic regrowth
- Yuanzheng Yue et al., Record ft of GaN HEMTs
- Ronghua Wang et al., Record ft/fmax of InAlGaN HEMTs
- Ronghua et al. Ohmic contact alloying process can lead to dispersion in GaN HEMTs
- Tom Zimmermann et al. at DRC 2009, The world first fin-channel GaN HEMT (also called tri-gate, nanowire or nano ribbon FETs)
Optoelectronics
Representative Publications
- Debdeep Jena et al; [Review] Device Design Opportunities in III-Nitrides (PSSa 2011)
- Moudud Islam et al., Cryogenic DUV LEDs (DRC 2015)
- Jai Verma et al, DUV LEDs (APL 2014)
- Berardi Sensale-Rodriguez et al., First graphene THz modulator demonstrated (Nat. Comms 2012)
- Berardi Sensale-Rodriguez et al., RTD-gated plasma wave THz amplifiers proposed (THzTST 2013)
- Rusen Yan et al., novel THz modulators proposed and demonstrated (OE 2012, ACS Photonics 2016)
- Berardi Sensale-Rodriguez et al., [Review] Graphene for Reconfigurable Terahertz Optoelectronics (Proc. of IEEE 2013)
Steep Transistors
Representative publications
- Dr. Xing, Invited talks on Secret Ingredients of Thing-TFET
- Mingda Oscar Li et al, Thin-TFET proposal and benchmark (JEDS 2015)
- Rusen Yan et al., First RT Esaki diode realized in 2D layered materials (NanoLett. 2015)
- Guangle Zhou et al., Type-I band aligned III-V TFETs demonstrated (EDL 2011)
- Guangle Zhou et al., Type-II band aligned III-V TFETs deomstrated (DRC 2011)
- Guangle Zhou et al., Type-III band aligned III-V TFETs demonstrated (IEDM 2012)
2D Crystals
Representative publications
- Tian Fang et al., Carrier statistics and quantum capacitance of graphene sheets and ribbons (APL 2007)
- Rusen Yan et al., DUV transparency of graphene enables hole photoemission in internal photoemission (IPE) (APL 2013)
- Suresh Vishwanath et al., Comprehensive structural and optical properties of MBE MoSe2 (J2D 2015)
- Suresh Vishwanath et al., Heterostructures and superlattices of MBE layered crystals (JMR 2016)
- Park & Vishwanath et al., Air exposure effects on MBE WSe2 (ACS Nano 2016)
For the convenience of every group member, find out and plan ahead on which conference to attend and which journal to submit to;
Compiled conference and journal list.