Our Research


The central research theme in our group is to develop electronic grade semiconductors and their heterostructures with other functional materials including semiconductors, insulators, superconductors, ferroelectrics, magnetics, multiferroics, and metals etc..   We strive to understand the fundamental limits of these materials and their applications.  The essential scientific tools our group uses include epitaxy, basic material characterizations, transport theory and experiments, device theory and experiments.  Typically speaking, a PhD graduate from our group can be a theorist but with a mindset and immersive training to collaborate closely with experimentalists; a PhD graduate from our group can be an experimentalist but with at least 20% of the thesis dedicated to theory of materials or transport or devices.

Our current research can be loosely grouped into the following areas: AlN, BN, Ga2O3, other nitrides and oxides such as superconductors, ferroelectrics and magnetics, in terms of materials; milimeter-wave electronics, power electronics, light emitting devices, DUV, materials and devices under extreme environment, quantum technologies, non-linear optical properties in engineered materials, memory in terms of applications. Previous research topics include: nanowires, wafer bonding, steep transistors, conventional III-Vs, graphene and 2-D crystals.  

More details can be found in the topical research pages below.

Conferences and Journals
Intranet (BOX) for group member access 



Cornell Ultrawide Bandgap Nitride Electronics Group

Cornell Ultrawide Bandgap Oxide Electronics Group

Cornell UV Laser and Photonics Group

Cornell 2D Materials and Devices Group

Cornell Superconductor / Semiconductor Quantum Device Group

Cornell Ultrapolar and Ferroelectric Semiconductors Group