Bennett Cromer, a 5th year PhD candidate in the Jena-Xing group, has dedicated his degree to the study of the wide bandgap material Ga2O3. Following in the footsteps of Dr. Wenshen Li and Mr. Devansh Saraswat who demonstrated a record 4.3 MV/cm Ga2O3 Schottky diode in 2020 (doi:10.1109/DRC50226.2020.9135177), Cromer et al. has demonstrated Ga2O3 Schottky diodes capable of withstanding electric fields up to 6.94 MV/cm nondestructively. Read more at