News

Position Opening: Research Associate

The Jena-Xing Group at Cornell University is seeking a Research Associate scholar to work on molecular beam epitaxy (MBE) of various compound semiconductors, which include nitrides, arsenides, oxides, layered and functional materials and their heterostructures. Find...

Wenshen explains how to best activate a buried p-type GaN layer doped with Mg!

The Mg acceptors in a GaN:Mg layer grown in the presence of hydrogen are often passivated by H therefore can’t release mobile holes. It is particularly difficult to break the Mg-H bond and let the H atoms out if GaN:Mg is buried under n-type layers....

(Utah) Hugo’s work on THz-2DEG coupling is featured on the cover of J. of Applied Physics

Terahertz electromagnetic waves can interact with 2DEG strongly due to the match between the wave frequency and the electron scattering time. Should you design coupled or synchronized 2DEG oscillators to maximize coupling?...

Editor’s pick: Zongyang illustrates the breakdown mechanism in Ga2O3 Fin power transistors!

Fin transistors are often used in logic devices for their efficient gate-control of the channel. What if you add a lightly-doped drift region between the gate and the drain? Do you end up with an equivalent fin-LDMOS?...

The Jena-Xing group wins Best Student Paper Awards at the Compound Semiconductor Week (CSW) 2018

Congratulations to Shyam and Wenshen for winning a Best Student Paper and a Honorable Mention! http://www.ece.cornell.edu/news/index.cfm?news_id=96616

Prof. Xing leads a team of faculty to invent new memories.

Re-imagining Computer System Memories: Prof. Xing is leading an interdisciplinary team spanning materials, devices, circuits, and architectures to realize a memory and paradigm shift in memory-processing...

Congratulations to Zongyang and the power team to report the first kV Ga2O3 E-mode transistors!

http://news.cornell.edu/stories/2018/06/vertical-gallium-oxide-transistor-high-power-efficiencyZongyang and the power team report the first kV Ga2O3 E-mode transistors! High-voltage gallium oxide transistors with more than 1kV breakdown: Cornell News...

Mingda, Vishwanath, Rusen and Huai-Hsu’s work with Dr. Qin Zhang at NIST on band offset in MBE-SnSe2 noted as APL Editor’s pick!

Congratulations to Mingda, Vishwanath, Rusen and Huai-Hsun for their work with Dr. Qin Zhang at NIST on band offset in MBE-SnSe2 being the APL Editor’s pick!

Amit Verma’s work on VO2-GaN phaseFET featured by Semiconductors Today!

Congratulations to Amit Verma for his work on VO2-GaN phaseFET being featured by Semiconductors Today!

Rusen Yan’s work on GaN/NbN epitaxial heterostructures published in Nature!

Congratulations to Rusen Yan for his work on GaN/NbN epitaxial heterostructures to appear in Nature! Check out the Cornell Chronicle Story.

Jimy Encomendero’s work on GaN RTD oscillators on the cover of APL!

Congratulations to Jimy Encomendero for his work on GaN RTD oscillators appearing on the cover image of APL!

Congratulations to Professor Jena!

Congratulations to Professor Jena for having been elected as a Fellow of APS!

Shyam Bharadwaj won the Best Paper Award!

Congratulations to Shyam Bharadwaj for winning the Best Paper Award at the Device Research Conference 2017!

Jimy Encomendero published breakthrough!

Congratulation to Jimy Encomendero for publishing breakthrough results on GaN RTDs in PRX! Check out the news release here!

Suresh Vishwanath and Columbia University collaborators publish in PRX!

Congratulations to Suresh Vishwanath, with collaborators at Columbia University, for publishing SnSe crystalline topological insulator (TI) electronic structures in PRX!

Professor Jena lead a group of faculty to win the NSF EFRI NEWLAW team project!

Congratulations to Professor Jena for leading a group of four faculty (three at Cornell) for winning the NSF EFRI NEWLAW team project! Check out the press release here.

Congratulations to Kristin Kurz!

Congratulations to our group's administrative assistant, Kristin Kurz! She will be moving onto be the Events and Office Coordinator at the Cornell Public Service Center! Thank you for having supported the group the past 2 years! We will still call you across...

2017 Frank and Rosa Rhodes Scholarship Recipient!

Congratulations to Vineeta Muthuraj, a recipient of the 2017 Frank and Rosa Rhodes Scholarship!

Young Scientist Award Winner!

Congratulations to Kevin Lee for winning a Young Scientist Award at the International Workshop on UV Materials and Devices 2017!

Congratulations to SM (Moudud) Islam for being featured by Semiconductor Today!

Congratulations to SM (Moudud) Islam for being featured by Semiconductor Today! Please check out the Semiconductor Today article or read the full paper!

Four 4 DRC papers presented!

Congratulations to Wenshen Li, Zongyang Hu, Kazuki Nomoto, and the team for presenting the following 4 DRC papers! - Wenshen Li et al. "600 V GaN vertical V-trench MOSFET with MBE regrown channel”, the first high breakdown vertical GaN transistor using MBE grown...

Congratulations to Zongyang Hu and the Power team

Congratulations to Zongyang Hu and the Power team! Claiming the highest breakdown voltage so far for regrown vertical GaN p-n diodes [Zongyang Hu et al, IEEE Electron Device Letters, published online 29 June 2017]. “This is the first high-voltage vertical regrown p-n...