Fin transistors are often used in logic devices for their efficient gate-control of the channel. What if you add a lightly-doped drift region between the gate and the drain? Do you end up with an equivalent fin-LDMOS?
Fin transistors are often used in logic devices for their efficient gate-control of the channel. What if you add a lightly-doped drift region between the gate and the drain? Do you end up with an equivalent fin-LDMOS?