News
A productive 2020!
Combined, the Jena-Xing group published over 35+ peer-reviewed articles this year!
Congrats to Prof. Xing!
Prof. Xing is elected as a Fellow of the American Physical Society. https://news.cornell.edu/stories/2019/09/three-faculty-elected-fellows-american-physical-society
Congrats to Reet and Sam for ending the hunt for 2D hole gas in GaN!
Reet and Sam report the first hole doping arising from symmetry breaking in GaN/AlN without impurity dopants. This phenomenon was first predicted by Cornell researchers about 20 years ago. The hunt for this hole gas is finally over; more fundamental physics and...
Henryk’s work on Buried Tunnel Junction LEDs Highlighted!
Henryk’s work on buried tunnel junction was conceived and demonstrated for the first time. http://www.semiconductor-today.com/news_items/2019/jun/cornell-140619.shtml
Riena Wins Best Student Paper Award of IWGO 2019 at OSU!
Congrats to Riena! She presented her study on achieving phase-pure alpha-Ga2O3 on sapphire for the first time.
Vlad Protasenko Receives NSF PFI Grant!
Congrats to Vlad Protasenko for receiving a grant to work on commercialization of DUV-based Roomba-style sterilizer.
Prof. Jena argues why new nitrides are the upcoming exciting playground!
https://doi.org/10.7567/1347-4065/ab147b
Ryan Page reports how to grow hBN on sapphire using MBE.
PR Materials Editor’s suggestion: https://journals.aps.org/prmaterials/abstract/10.1103/PhysRevMaterials.3.064001
Wenshen reveals crystallographic dependence of trench SBDs in Ga2O3!
Featured as Spotlights: https://iopscience.iop.org/article/10.7567/1882-0786/ab206c
Sam Bader illustrates ways to improve hole mobility in GaN
APL Editor’s pick: https://aip.scitation.org/doi/10.1063/1.5099957?af=R
Austin Hickman demonstrates high-field breakdown in AlN/GaN/AlN HEMTs for the first time
Semiconductor Today: http://www.semiconductor-today.com/news_items/2019/jul/cornell-110719.shtml
Kevin Lee receives Best Poster Award at DRC 2019!
Kevin Lee receives Best Poster Award at DRC 2019!
Congrats to Austin for being selected as one of the Commercialization Fellows!
https://news.cornell.edu/stories/2019/05/commercialization-fellows-set-sights-tech-solutions
Group Members Receive Awards, congrats to Jon, Ryan and Shuyao!
Jonathan McCandless has won the NSF Graduate Research Fellowship! Ryan Page has won the MSE TA Award of 2019! Shuyao Chen has won the ECE Best Poster Award of 2019!
April 2019 – Congrats to Wenshen!
Wenshen writes a feature article on Ga2O3 for Compound Semiconductor. https://compoundsemiconductor.net/article/106964/Unleashing_the_promise_of_gallium_oxide/feature
Cornell, Air Force to study “disruptive material” in new center
A new center established by Cornell and the Air Force Research Laboratory (AFRL) aims to discover the atomic secrets of beta-gallium oxide, a promising new material that has piqued the interest of engineers for its potential to allow electronic devices to handle...
Editor’s suggestion: Jimy’s work on GaN RTDs
Jimy reports on how polarization field inherent in III-nitride semiconductors breaks symmetry in characteristics of GaN RTDs! https://journals.aps.org/prapplied/abstract/10.1103/PhysRevApplied.11.034032
Congrats to Jimy for winning the NIST Uncertainty Student Award
Remember to perform error analysis for all studies! https://www.mrs.org/61st-emc/awards
Sam reports record performance hole-conducting FETs in GaN!
Sam Bader reports record performance hole-conducting FETs in GaN! Featured by Semiconductor Today: Increasing current performance in III-nitride p-channel transistors
IEDM 2018 Conference Papers!
At IEDM 2018, Wenshen presented his record-performing Ga2O3 trench JBSDs, and our collaborators at Padova presented detailed avalanche behavior of GaN p-n diodes that are doped by polarization-induced bulk doping for the first time, designed and fabricated by Kazuki...
Congrats to Okan (Rana group)!
Okan’s recent work (Rana group) is featured by Scilight: how defects in Ga2O3 potential impact breakdown of the material. Role of defect states in high bandgap gallium oxide identified using two-color spectroscopy
Sam reports record performance hole-conducting FETs in GaN!
There are very few wide bandgap semiconductors (>3 eV) to show hole conduction with decent mobilities. Polarization-doped holes at the GaN/AlN interface makes it possible to work around the deep acceptors in a field effect transistor. Check out Sam’s hard work!...
Editor’s pick: Wenshen demonstrates >1200 V Ga2O3 diodes with record-low leakage!
Reverse-biased Schottky barrier diodes often suffer from high leakage current due to field-enhanced thermionic emission. Check out how Wenshen reduces the electric field at the metal-Ga2O3 junction to achieve extremely low leakage current at kV....
Prof. Jena and Prof. Xing elected endowed chairs!
Prof. Jena and Prof. Xing elected endowed chairs. Congrats! https://www.ece.cornell.edu/news/jena-xing-and-zhao-elected-endowed-chairs
Kevin Lee received the IWN 2018 Student Award last week in Japan!
Congrats to Kevin and all co-authors who contributed to the buried tunnel junction project!