Congratulations to Zongyang Hu and the Power team

Claiming the highest breakdown voltage so far for regrown vertical GaN p-n diodes [Zongyang Hu et al, IEEE Electron Device Letters, published online 29 June 2017].
“This is the first high-voltage vertical regrown p-n junction ever reported in the GaN system,” http://www.semiconductor-today.com/news_items/2017/jul/cornell_190717.shtml