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PolarJFET: a novel vertical GaN power transistor concept

PolarJFET: a novel vertical GaN power transistor concept

by Jessica Edmister | Jan 11, 2018

Program: SWITCHES
GaN epi-wafers for vertical high-power devices grown by vapor phase epitaxy on lowcost, high-quality ammonothermal GaN substrates

GaN epi-wafers for vertical high-power devices grown by vapor phase epitaxy on lowcost, high-quality ammonothermal GaN substrates

by Jessica Edmister | Jan 11, 2018

Program: Strategies for wide-bandgap inexpensive transistors for controlling high efficiency systems (SWITCHES)
Kavli Institute at Cornell
Cornell University Department of Materials Science Engineering
Cornell University School of Electrical and Computer Engineering
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