GaN epi-wafers for vertical high-power devices grown by vapor phase epitaxy on lowcost, high-quality ammonothermal GaN substrates GaN electronics Program: Strategies for wide-bandgap inexpensive transistors for controlling high efficiency systems (SWITCHES) Skills Advanced Research Program Agency - Energy (ARPA-E) Posted on January 11, 2018 ← Chemically functionalized graphene as high performance heat spreader PolarJFET: a novel vertical GaN power transistor concept →