PolarJFET: a novel vertical GaN power transistor concept GaN electronics Program: SWITCHES Skills Advanced Research Program Agency - Energy (ARPA-E) Posted on January 11, 2018 ← GaN epi-wafers for vertical high-power devices grown by vapor phase epitaxy on lowcost, high-quality ammonothermal GaN substrates EFRI-2DARE: Monolayer Heterostructures: Epitaxy to Beyond-CMOS Devices →
