News
IEDM 2018 Conference Papers!
At IEDM 2018, Wenshen presented his record-performing Ga2O3 trench JBSDs, and our collaborators at Padova presented detailed avalanche behavior of GaN p-n diodes that are doped by polarization-induced bulk doping for the first time, designed and fabricated by Kazuki...
Congrats to Okan (Rana group)!
Okan’s recent work (Rana group) is featured by Scilight: how defects in Ga2O3 potential impact breakdown of the material. Role of defect states in high bandgap gallium oxide identified using two-color spectroscopy
Sam reports record performance hole-conducting FETs in GaN!
There are very few wide bandgap semiconductors (>3 eV) to show hole conduction with decent mobilities. Polarization-doped holes at the GaN/AlN interface makes it possible to work around the deep acceptors in a field effect transistor. Check out Sam’s hard work!...
Editor’s pick: Wenshen demonstrates >1200 V Ga2O3 diodes with record-low leakage!
Reverse-biased Schottky barrier diodes often suffer from high leakage current due to field-enhanced thermionic emission. Check out how Wenshen reduces the electric field at the metal-Ga2O3 junction to achieve extremely low leakage current at kV....
Prof. Jena and Prof. Xing elected endowed chairs!
Prof. Jena and Prof. Xing elected endowed chairs. Congrats! https://www.ece.cornell.edu/news/jena-xing-and-zhao-elected-endowed-chairs
Kevin Lee received the IWN 2018 Student Award last week in Japan!
Congrats to Kevin and all co-authors who contributed to the buried tunnel junction project!
Position Opening: Research Associate
The Jena-Xing Group at Cornell University is seeking a Research Associate scholar to work on molecular beam epitaxy (MBE) of various compound semiconductors, which include nitrides, arsenides, oxides, layered and functional materials and their heterostructures. Find...
Wenshen explains how to best activate a buried p-type GaN layer doped with Mg!
The Mg acceptors in a GaN:Mg layer grown in the presence of hydrogen are often passivated by H therefore can’t release mobile holes. It is particularly difficult to break the Mg-H bond and let the H atoms out if GaN:Mg is buried under n-type layers....
(Utah) Hugo’s work on THz-2DEG coupling is featured on the cover of J. of Applied Physics
Terahertz electromagnetic waves can interact with 2DEG strongly due to the match between the wave frequency and the electron scattering time. Should you design coupled or synchronized 2DEG oscillators to maximize coupling?...
Editor’s pick: Zongyang illustrates the breakdown mechanism in Ga2O3 Fin power transistors!
Fin transistors are often used in logic devices for their efficient gate-control of the channel. What if you add a lightly-doped drift region between the gate and the drain? Do you end up with an equivalent fin-LDMOS?...
The Jena-Xing group wins Best Student Paper Awards at the Compound Semiconductor Week (CSW) 2018
Congratulations to Shyam and Wenshen for winning a Best Student Paper and a Honorable Mention! http://www.ece.cornell.edu/news/index.cfm?news_id=96616
Prof. Xing leads a team of faculty to invent new memories.
Re-imagining Computer System Memories: Prof. Xing is leading an interdisciplinary team spanning materials, devices, circuits, and architectures to realize a memory and paradigm shift in memory-processing...
Congratulations to Zongyang and the power team to report the first kV Ga2O3 E-mode transistors!
http://news.cornell.edu/stories/2018/06/vertical-gallium-oxide-transistor-high-power-efficiencyZongyang and the power team report the first kV Ga2O3 E-mode transistors! High-voltage gallium oxide transistors with more than 1kV breakdown: Cornell News...
Mingda, Vishwanath, Rusen and Huai-Hsu’s work with Dr. Qin Zhang at NIST on band offset in MBE-SnSe2 noted as APL Editor’s pick!
Congratulations to Mingda, Vishwanath, Rusen and Huai-Hsun for their work with Dr. Qin Zhang at NIST on band offset in MBE-SnSe2 being the APL Editor’s pick!
Amit Verma’s work on VO2-GaN phaseFET featured by Semiconductors Today!
Congratulations to Amit Verma for his work on VO2-GaN phaseFET being featured by Semiconductors Today!
Rusen Yan’s work on GaN/NbN epitaxial heterostructures published in Nature!
Congratulations to Rusen Yan for his work on GaN/NbN epitaxial heterostructures to appear in Nature! Check out the Cornell Chronicle Story.
Jimy Encomendero’s work on GaN RTD oscillators on the cover of APL!
Congratulations to Jimy Encomendero for his work on GaN RTD oscillators appearing on the cover image of APL!
Congratulations to Professor Jena!
Congratulations to Professor Jena for having been elected as a Fellow of APS!
Shyam Bharadwaj won the Best Paper Award!
Congratulations to Shyam Bharadwaj for winning the Best Paper Award at the Device Research Conference 2017!
Jimy Encomendero published breakthrough!
Congratulation to Jimy Encomendero for publishing breakthrough results on GaN RTDs in PRX! Check out the news release here!
Suresh Vishwanath and Columbia University collaborators publish in PRX!
Congratulations to Suresh Vishwanath, with collaborators at Columbia University, for publishing SnSe crystalline topological insulator (TI) electronic structures in PRX!
Professor Jena lead a group of faculty to win the NSF EFRI NEWLAW team project!
Congratulations to Professor Jena for leading a group of four faculty (three at Cornell) for winning the NSF EFRI NEWLAW team project! Check out the press release here.
Congratulations to Kristin Kurz!
Congratulations to our group's administrative assistant, Kristin Kurz! She will be moving onto be the Events and Office Coordinator at the Cornell Public Service Center! Thank you for having supported the group the past 2 years! We will still call you across...
2017 Frank and Rosa Rhodes Scholarship Recipient!
Congratulations to Vineeta Muthuraj, a recipient of the 2017 Frank and Rosa Rhodes Scholarship!
Young Scientist Award Winner!
Congratulations to Kevin Lee for winning a Young Scientist Award at the International Workshop on UV Materials and Devices 2017!