News

Congratulations to Kristin Kurz!

Congratulations to our group's administrative assistant, Kristin Kurz! She will be moving onto be the Events and Office Coordinator at the Cornell Public Service Center! Thank you for having supported the group the past 2 years! We will still call you across...

Young Scientist Award Winner!

Congratulations to Kevin Lee for winning a Young Scientist Award at the International Workshop on UV Materials and Devices 2017!

Four 4 DRC papers presented!

Congratulations to Wenshen Li, Zongyang Hu, Kazuki Nomoto, and the team for presenting the following 4 DRC papers! - Wenshen Li et al. "600 V GaN vertical V-trench MOSFET with MBE regrown channel”, the first high breakdown vertical GaN transistor using MBE grown...

Congratulations to Zongyang Hu and the Power team

Congratulations to Zongyang Hu and the Power team! Claiming the highest breakdown voltage so far for regrown vertical GaN p-n diodes [Zongyang Hu et al, IEEE Electron Device Letters, published online 29 June 2017]. “This is the first high-voltage vertical regrown p-n...

Congrats to Liheng Zhang!

Congratulations to Liheng Zhang for winning Best MS paper award of MSE 2017! Liheng is going to pursue a PhD this fall at Yale!

Paper Authored by Wenshen Li is featured by Semiconductor Today!

      Congratulations to Wenshen and the team for their paper, Gallium nitride vertical junction barrier Schottky diodes, being featured by Semiconductor Today!       "Cornell University, Qorvo Inc and IQE RF LLC in the USA have reported on work on vertical junction...

Work by Zongyang Hu highlighted!

Highlighted by Applied Physics Letters, Zongyang Hu's work on Building blocks for GaN power switches can be found here: https://www.aip.org/publishing/journal-highlights/building-blocks-gan-power-switches