News
Wenshen reveals crystallographic dependence of trench SBDs in Ga2O3!
Featured as Spotlights: https://iopscience.iop.org/article/10.7567/1882-0786/ab206c
Sam Bader illustrates ways to improve hole mobility in GaN
APL Editor’s pick: https://aip.scitation.org/doi/10.1063/1.5099957?af=R
Austin Hickman demonstrates high-field breakdown in AlN/GaN/AlN HEMTs for the first time
Semiconductor Today: http://www.semiconductor-today.com/news_items/2019/jul/cornell-110719.shtml
Kevin Lee receives Best Poster Award at DRC 2019!
Kevin Lee receives Best Poster Award at DRC 2019!
Congrats to Austin for being selected as one of the Commercialization Fellows!
https://news.cornell.edu/stories/2019/05/commercialization-fellows-set-sights-tech-solutions
Group Members Receive Awards, congrats to Jon, Ryan and Shuyao!
Jonathan McCandless has won the NSF Graduate Research Fellowship! Ryan Page has won the MSE TA Award of 2019! Shuyao Chen has won the ECE Best Poster Award of 2019!
April 2019 – Congrats to Wenshen!
Wenshen writes a feature article on Ga2O3 for Compound Semiconductor. https://compoundsemiconductor.net/article/106964/Unleashing_the_promise_of_gallium_oxide/feature
Cornell, Air Force to study “disruptive material” in new center
A new center established by Cornell and the Air Force Research Laboratory (AFRL) aims to discover the atomic secrets of beta-gallium oxide, a promising new material that has piqued the interest of engineers for its potential to allow electronic devices to handle...
Editor’s suggestion: Jimy’s work on GaN RTDs
Jimy reports on how polarization field inherent in III-nitride semiconductors breaks symmetry in characteristics of GaN RTDs! https://journals.aps.org/prapplied/abstract/10.1103/PhysRevApplied.11.034032
Congrats to Jimy for winning the NIST Uncertainty Student Award
Remember to perform error analysis for all studies! https://www.mrs.org/61st-emc/awards
Sam reports record performance hole-conducting FETs in GaN!
Sam Bader reports record performance hole-conducting FETs in GaN! Featured by Semiconductor Today: Increasing current performance in III-nitride p-channel transistors
IEDM 2018 Conference Papers!
At IEDM 2018, Wenshen presented his record-performing Ga2O3 trench JBSDs, and our collaborators at Padova presented detailed avalanche behavior of GaN p-n diodes that are doped by polarization-induced bulk doping for the first time, designed and fabricated by Kazuki...
Congrats to Okan (Rana group)!
Okan’s recent work (Rana group) is featured by Scilight: how defects in Ga2O3 potential impact breakdown of the material. Role of defect states in high bandgap gallium oxide identified using two-color spectroscopy
Sam reports record performance hole-conducting FETs in GaN!
There are very few wide bandgap semiconductors (>3 eV) to show hole conduction with decent mobilities. Polarization-doped holes at the GaN/AlN interface makes it possible to work around the deep acceptors in a field effect transistor. Check out Sam’s hard work!...
Editor’s pick: Wenshen demonstrates >1200 V Ga2O3 diodes with record-low leakage!
Reverse-biased Schottky barrier diodes often suffer from high leakage current due to field-enhanced thermionic emission. Check out how Wenshen reduces the electric field at the metal-Ga2O3 junction to achieve extremely low leakage current at kV....
Prof. Jena and Prof. Xing elected endowed chairs!
Prof. Jena and Prof. Xing elected endowed chairs. Congrats! https://www.ece.cornell.edu/news/jena-xing-and-zhao-elected-endowed-chairs
Kevin Lee received the IWN 2018 Student Award last week in Japan!
Congrats to Kevin and all co-authors who contributed to the buried tunnel junction project!
Position Opening: Research Associate
The Jena-Xing Group at Cornell University is seeking a Research Associate scholar to work on molecular beam epitaxy (MBE) of various compound semiconductors, which include nitrides, arsenides, oxides, layered and functional materials and their heterostructures. Find...
Wenshen explains how to best activate a buried p-type GaN layer doped with Mg!
The Mg acceptors in a GaN:Mg layer grown in the presence of hydrogen are often passivated by H therefore can’t release mobile holes. It is particularly difficult to break the Mg-H bond and let the H atoms out if GaN:Mg is buried under n-type layers....
(Utah) Hugo’s work on THz-2DEG coupling is featured on the cover of J. of Applied Physics
Terahertz electromagnetic waves can interact with 2DEG strongly due to the match between the wave frequency and the electron scattering time. Should you design coupled or synchronized 2DEG oscillators to maximize coupling?...
Editor’s pick: Zongyang illustrates the breakdown mechanism in Ga2O3 Fin power transistors!
Fin transistors are often used in logic devices for their efficient gate-control of the channel. What if you add a lightly-doped drift region between the gate and the drain? Do you end up with an equivalent fin-LDMOS?...
The Jena-Xing group wins Best Student Paper Awards at the Compound Semiconductor Week (CSW) 2018
Congratulations to Shyam and Wenshen for winning a Best Student Paper and a Honorable Mention! http://www.ece.cornell.edu/news/index.cfm?news_id=96616
Prof. Xing leads a team of faculty to invent new memories.
Re-imagining Computer System Memories: Prof. Xing is leading an interdisciplinary team spanning materials, devices, circuits, and architectures to realize a memory and paradigm shift in memory-processing...
Congratulations to Zongyang and the power team to report the first kV Ga2O3 E-mode transistors!
http://news.cornell.edu/stories/2018/06/vertical-gallium-oxide-transistor-high-power-efficiencyZongyang and the power team report the first kV Ga2O3 E-mode transistors! High-voltage gallium oxide transistors with more than 1kV breakdown: Cornell News...
Mingda, Vishwanath, Rusen and Huai-Hsu’s work with Dr. Qin Zhang at NIST on band offset in MBE-SnSe2 noted as APL Editor’s pick!
Congratulations to Mingda, Vishwanath, Rusen and Huai-Hsun for their work with Dr. Qin Zhang at NIST on band offset in MBE-SnSe2 being the APL Editor’s pick!