These p-channel GaN FETs boast a current density of >420 mA/mm and a speed of ~20 GHz. For the first time, it is possible to design a circuit with hole-conducting transistor in GaN! The secret ingredient lies in the “high-mobility” 2D hole gas generated by the polarization discontinuity at GaN/AlN interface, which Reet and Sam reported in Science 2019.
