by Jessica Edmister | Nov 22, 2017 | News
Congratulations to SM (Moudud) Islam for being featured by Semiconductor Today! Please check out the Semiconductor Today article or read the full paper!
by Jessica Edmister | Nov 21, 2017 | News
Congratulations to Wenshen Li, Zongyang Hu, Kazuki Nomoto, and the team for presenting the following 4 DRC papers! – Wenshen Li et al. “600 V GaN vertical V-trench MOSFET with MBE regrown channel”, the first high breakdown vertical GaN transistor using MBE...
by Barbara Woods Walpole | Aug 28, 2017 | News
Congratulations to Zongyang Hu and the Power team! Claiming the highest breakdown voltage so far for regrown vertical GaN p-n diodes [Zongyang Hu et al, IEEE Electron Device Letters, published online 29 June 2017]. “This is the first high-voltage vertical regrown p-n...
by Barbara Woods Walpole | Jun 27, 2017 | News
Congratulations to Yongjin for being Applied Physics Letters Editor’s Pick! Please find the article here.
by Barbara Woods Walpole | Jun 27, 2017 | News
Congrats to Yongjin Cho on having his work featured by Semiconductor Today!
by Barbara Woods Walpole | May 12, 2017 | News
Congratulations to Yuxin Ji for winning Best MEng poster overall of ECE 2017!
