Jena-Xing Laboratory
  • Home
  • Publications
  • News
  • Facilities
  • People
  • Research
  • Teaching
  • Prospective Students
  • Contact/Calendar
Select Page

PolarJFET: a novel vertical GaN power transistor concept

GaN electronics

Program: SWITCHES

Skills

Advanced Research Program Agency - Energy (ARPA-E)

Posted on

January 11, 2018

← GaN epi-wafers for vertical high-power devices grown by vapor phase epitaxy on lowcost, high-quality ammonothermal GaN substrates EFRI-2DARE: Monolayer Heterostructures: Epitaxy to Beyond-CMOS Devices →

Recent Posts

  • Akhansha Arvind, Chuan Chang, Mareum Khan won Best Lightning Talks at the 2025 SUPREME Annual Review
  • Wenwen Zhao joins RPI as a tenure-track Assistant Professor
  • Naomi Pieczulewski and Kathleen T. Smith report achieving consistently low contact resistance in non-alloyed Ti/Au ohmics to β-Ga2O3 – Editor’s pick & in Cornell Chronicle
  • Chuan Chang receives award from EMC
  • Eungkyun Kim receives 2025 KIC Graduate Fellowship
Kavli Institute at Cornell
Cornell University School of Electrical and Computer Engineering
Cornell University Department of Materials Science Engineering
Cornell University Department of Materials Science and Engineering
Cornell University School of Electrical and Computer Engineering

C2D2

C2D2-logotype
Kavli Institute at Cornell
  • Facebook
  • X