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PolarJFET: a novel vertical GaN power transistor concept

GaN electronics

Program: SWITCHES

Skills

Advanced Research Program Agency - Energy (ARPA-E)

Posted on

January 11, 2018

← GaN epi-wafers for vertical high-power devices grown by vapor phase epitaxy on lowcost, high-quality ammonothermal GaN substrates EFRI-2DARE: Monolayer Heterostructures: Epitaxy to Beyond-CMOS Devices →

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