Jena-Xing Laboratory
  • Home
  • Publications
  • News
  • Facilities
  • People
  • Research
  • Teaching
  • Prospective Students
  • Contact/Calendar
Select Page

GaN epi-wafers for vertical high-power devices grown by vapor phase epitaxy on lowcost, high-quality ammonothermal GaN substrates

GaN electronics

Program: Strategies for wide-bandgap inexpensive transistors for controlling high efficiency systems (SWITCHES)

Skills

Advanced Research Program Agency - Energy (ARPA-E)

Posted on

January 11, 2018

← Chemically functionalized graphene as high performance heat spreader PolarJFET: a novel vertical GaN power transistor concept →

Recent Posts

  • Professor Xing honored by SIA/SRC for excellence in semiconductor research
  • Chandrashekhar Savant wins TECHCON 2025 Top 10 Best Student Presenter Award
  • Professor Xing receives the Michael Tien ’72 teaching award
  • Akhansha Arvind, Chuan Chang, Mareum Khan won Best Lightning Talks at the 2025 SUPREME Annual Review
  • Wenwen Zhao joins RPI as a tenure-track Assistant Professor
Kavli Institute at Cornell
Cornell University School of Electrical and Computer Engineering
Cornell University Department of Materials Science Engineering
Cornell University Department of Materials Science and Engineering
Cornell University School of Electrical and Computer Engineering

C2D2

C2D2-logotype
Kavli Institute at Cornell
  • Facebook
  • X