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GaN epi-wafers for vertical high-power devices grown by vapor phase epitaxy on lowcost, high-quality ammonothermal GaN substrates

GaN electronics

Program: Strategies for wide-bandgap inexpensive transistors for controlling high efficiency systems (SWITCHES)

Skills

Advanced Research Program Agency - Energy (ARPA-E)

Posted on

January 11, 2018

← Chemically functionalized graphene as high performance heat spreader PolarJFET: a novel vertical GaN power transistor concept →

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