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EFRI-2DARE: Monolayer Heterostructures: Epitaxy to Beyond-CMOS Devices

2D Crystals
Skills

National Science Foundation (NSF)

Posted on

January 11, 2018

← PolarJFET: a novel vertical GaN power transistor concept

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Kavli Institute at Cornell
Cornell University School of Electrical and Computer Engineering
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Cornell University Department of Materials Science and Engineering
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