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EFRI-2DARE: Monolayer Heterostructures: Epitaxy to Beyond-CMOS Devices

2D Crystals
Skills

National Science Foundation (NSF)

Posted on

January 11, 2018

← PolarJFET: a novel vertical GaN power transistor concept
Kavli Institute at Cornell
Cornell University Department of Materials Science Engineering
Cornell University School of Electrical and Computer Engineering
C2D2-logotype
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