News
05/2013: Dr. Xing has been promoted to full professor.
05/2013: Dr. Xing has been promoted to full professor. http://provost.nd.edu/information-for-faculty/faculty-promotions/to-professor-2013/
04/2013: Ronghua and Berardi defended their Ph.D. dissertations.
04/2013: Ronghua and Berardi defended their Ph.D. dissertations.
03/2013: Berardi has accepted a tenure-track assistant professor offer from University of Utah
03/2013: Berardi has accepted a tenure-track assistant professor offer from University of Utah.
03/2013: Ronghua joined Transphorm, CA
03/2013: Ronghua joined Transphorm, CA.
03/2013: Berardi was awarded the 1st place of the Engineering Division at the GSU Symposium 2013 at ND.
03/2013: Berardi was awarded the 1st place of the Engineering Division at the GSU Symposium 2013 at ND.
2013: Postdoc positions available now to explore nanoelectronics for the next generation switch.
Job posting link below and THz (please refer to the Research page for background, send resumes to Dr. Xing). http://www.nature.com/naturejobs/science/jobs/304270-Post-Doctoral-Researcher-in-2D-Materials-and-Tunnel-Transistors
02/2013: Ronghua’s APEX paper on InGaN HEMTs has been selected a SPOTLIGHTs work by the APEX editorial board
http://apex.jsap.jp/spotlights/index.html
02/2013: Ronghua’s achievement of highest balanced ft/fmax in InAlGaN barrier GaN HEMTs has been featured by Semiconductor-Today.
This is the 3rd piece of work first-authored by Ronghua that has been featured by Semiconductor-Today. http://www.semiconductor-today.com/news_items/2013/FEB/UND_150213.html
01/2013: Ronghua’s work on InGaN channel GaN HEMTs has been featured by Semiconductor-Today
.http://www.semiconductor-today.com/news_items/2013/JAN/KOPIN_100113.html
01/2013: LEAST center has been announced.
The gist of LEAST reported by the local TV station:http://www.wndu.com/home/headlines/New-ND-research-could-bring-faster-charging-for-mobiles--187532601.html
12/2012: Rusen won the best post award at TeraNano 2012.
12/2012: Rusen won the best post award at TeraNano 2012.
12/2012: Guangle presented the record performance of tunnel FETs at IEDM.
Guangle fabricated using a heterostructure with broken gap or Type-III energy band alignment for the first time. http://mind.nd.edu/news/020113news_TFET-record-high-drive-current.htm
11/2012: Both Jia and Guangle successfully defended their PhD dissertations. Congrats to Dr. Jia and Dr. Zhou!
11/2012: Both Jia and Guangle successfully defended their PhD dissertations. Congrats to Dr. Jia and Dr. Zhou!
10/2012, Dr. Xing was featured at the home football game (UND vs BYU).
http://provost.nd.edu/information-for-faculty/featured-faculty/huili-grace-xing/
10/2012, Ronghua Won a Best Paper Award at IWN, Sapporo.
http://iwn2012.jp/paperaward/Awarded-Papers.pdf
10/2012: Our graphene THz work is featured by NSF at LiveScience.
http://www.livescience.com/24336-thz-waves-graphene-devices-nsf-bts.html
10/2012: Berardi’s APL is included to the special edition (50th Anniversary) of Applied Physics Letters’ “Editor’s Picks.”
http://apl.aip.org/50th_anniversary_editors_picks
9/2012: Jia joined on Semiconductor and Guangle joined ScanDisk.
9/2012: Jia joined On Semiconductor and Guangle joined ScanDisk.
9/2012: Berardi won the Best Student Presentation Award at IRMMW-THz 2012, held in Wollongong, Australia.
9/2012: Berardi won the Best Student Presentation award at IRMMW-THz 2012, held in Wollongong, Australia.
8/2012: Rusen, stationed at NIST, has added an exciting twist using graphene for a well-established technique: Internal Photoemission (IPE).
Here is a news release from NIST. http://www.nist.gov/pml/div683/graphene_characterization.cfm
6/2012: Bo presented a DRC late news on ft/fmax of 225/250 GHz Emode GaN HEMTs in collaboration with Triquint Semiconductor.
6/2012: Bo presented a DRC late news on ft/fmax of 225/250 GHz Emode GaN HEMTs in collaboration with Triquint Semiconductor.
6/2012: Berardi’s abstract to IRMMW-THz has been accepted and upgraded to an invited talk.
6/2012: Berardi's abstract to IRMMW-THz has been accepted and upgraded to an invited talk.
6/2012: News release on Yuanzheng’s 370 GHz GaN HEMTs.
http://www.semiconductor-today.com/news_items/2012/JUNE/UND_180612.html
4/2012: Guowang’s first strained GaN QW HEMTs were covered by Semiconductor Today.
http://www.semiconductor-today.com/news_items/2012/APRIL/UND_110412.html
4/2012: Dr. Kazuki Nomoto from Japan, Mingda Zhu joined our group.
4/2012: Dr. Kazuki Nomoto from Japan, Mingda Zhu joined our group.