News | Jena-Xing Laboratory

02/2013: Ronghua’s achievement of highest balanced ft/fmax in InAlGaN barrier GaN HEMTs has been featured by Semiconductor-Today.

This is the 3rd piece of work first-authored by Ronghua that has been featured by Semiconductor-Today. http://www.semiconductor-today.com/news_items/2013/FEB/UND_150213.html

01/2013: Ronghua’s work on InGaN channel GaN HEMTs has been featured by Semiconductor-Today

.http://www.semiconductor-today.com/news_items/2013/JAN/KOPIN_100113.html

01/2013: LEAST center has been announced.

The gist of LEAST reported by the local TV station:http://www.wndu.com/home/headlines/New-ND-research-could-bring-faster-charging-for-mobiles--187532601.html

12/2012: Rusen won the best post award at TeraNano 2012.

12/2012: Guangle presented the record performance of tunnel FETs at IEDM.

Guangle fabricated using a heterostructure with broken gap or Type-III energy band alignment for the first time. http://mind.nd.edu/news/020113news_TFET-record-high-drive-current.htm

11/2012: Both Jia and Guangle successfully defended their PhD dissertations. Congrats to Dr. Jia and Dr. Zhou!

10/2012, Dr. Xing was featured at the home football game (UND vs BYU).

http://provost.nd.edu/information-for-faculty/featured-faculty/huili-grace-xing/

10/2012, Ronghua Won a Best Paper Award at IWN, Sapporo.

http://iwn2012.jp/paperaward/Awarded-Papers.pdf

10/2012: Our graphene THz work is featured by NSF at LiveScience.

http://www.livescience.com/24336-thz-waves-graphene-devices-nsf-bts.html

10/2012: Berardi’s APL is included to the special edition (50th Anniversary) of Applied Physics Letters’ “Editor’s Picks.”

http://apl.aip.org/50th_anniversary_editors_picks

9/2012: Jia joined on Semiconductor and Guangle joined ScanDisk.

9/2012: Jia joined On Semiconductor and Guangle joined ScanDisk.

9/2012: Berardi won the Best Student Presentation Award at IRMMW-THz 2012, held in Wollongong, Australia.

9/2012: Berardi won the Best Student Presentation award at IRMMW-THz 2012, held in Wollongong, Australia.

8/2012: Rusen, stationed at NIST, has added an exciting twist using graphene for a well-established technique: Internal Photoemission (IPE).

Here is a news release from NIST. http://www.nist.gov/pml/div683/graphene_characterization.cfm

6/2012: Bo presented a DRC late news on ft/fmax of 225/250 GHz Emode GaN HEMTs in collaboration with Triquint Semiconductor.

6/2012: Berardi’s abstract to IRMMW-THz has been accepted and upgraded to an invited talk.

6/2012: Berardi's abstract to IRMMW-THz has been accepted and upgraded to an invited talk.

6/2012: News release on Yuanzheng’s 370 GHz GaN HEMTs.

http://www.semiconductor-today.com/news_items/2012/JUNE/UND_180612.html

4/2012: Guowang’s first strained GaN QW HEMTs were covered by Semiconductor Today.

http://www.semiconductor-today.com/news_items/2012/APRIL/UND_110412.html

4/2012: Dr. Kazuki Nomoto from Japan, Mingda Zhu joined our group.

4//2012: Berardi’s graphene THz modulator work appeared on line in Nature Communications.

Here is the Notre Dame news release: Another one from online: http://newsinfo.nd.edu/news/30537-graphene-based-terahertz-devices-the-wave-of-the-future/ US Navy Rides the Terahertz Wave to Next-Gen Electronics

4/2012: Rusen’s APL paper on band alignment of graphene/SiO2/Si determined by IPE is accepted.

4/2012: Rusen's APL paper on band alignment of graphene/SiO2/Si determined by IPE is accepted.

3/2012: Yuanzheng claimed record high ft in GaN HEMTs: 370 GHz ft. EDL will appear soon.

3/2012: Tian graduated with his PhD and joined First Solar, Toledo.

1/2012: Vishwanath joined the group.

10/2011: Yuping Zeng, postdoctoral researcher, joins the group from ETH. Welcome!

9/2011: Berardi’s APL paper on graphene-based THz modulator has been selected by AIP as research highlight! Marvelous!

http://www.aip.org/aip/research/PNH-9-12-2011.html