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02/2013: Ronghua’s achievement of highest balanced ft/fmax in InAlGaN barrier GaN HEMTs has been featured by Semiconductor-Today.

Feb 1, 2013 | News

This is the 3rd piece of work first-authored by Ronghua that has been featured by Semiconductor-Today.
http://www.semiconductor-today.com/news_items/2013/FEB/UND_150213.html

Kavli Institute at Cornell
Cornell University Department of Materials Science Engineering
Cornell University School of Electrical and Computer Engineering
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