by Jennifer LaMendola | Nov 22, 2024 | Uncategorized
“Epitaxial AIBN/ β-Nb2N Ferroelectric/ Superconductor Heterostructures,” authored by Chandrashekhar Savant et al., has been featured on the Cover of the November 2024 special issue of Wiley’s Physica Status Solidi (RRL). We report the first demonstration of...
by Jennifer LaMendola | Nov 21, 2024 | Uncategorized
Chandrashekhar P. Savant, et al. “Self-activated epitaxial growth of ScN films from molecular nitrogen at low temperatures” APL Materials 12, 111108 (2024) DOI: 10.1063/5.0222995. Unlike naturally occurring oxide crystals such as ruby and gemstones, there are...
by Jennifer LaMendola | Oct 11, 2024 | Uncategorized
EK Kim was selected as the Best User Presentation at the annual CNF Symposium 2024 for his presentation “Aluminum Nitride Based High-Electron-Mobility Transistors for RF Power Amplification” Kathleen Smith received the 2024 Nellie Yeh-Poh Lin Whetten...
by Jennifer LaMendola | Oct 2, 2024 | Uncategorized
Jon and Gallox Semiconductors were awarded a Breakthrough Energy Fellowship. Breakthrough Energy was founded in 2015 by Bill Gates and is the leading supporter of early-stage climate tech startups. Gallox is working to solve the most significant challenges hindering...
by Jennifer LaMendola | Oct 1, 2024 | Uncategorized
Gallium nitride-based semiconductors have been a boon for high-frequency and power electronics. They’ve also revolutionized energy-efficient LED lighting. But no semiconductor wafer has been able to do both at the same time efficiently. Now Cornell researchers, in...
by Jennifer LaMendola | Sep 11, 2024 | Uncategorized
“Ferroelectric AlBN films by molecular beam epitaxy” authored by Chandrashekhar Savant et al. has been chosen as the Editor’s pick and featured on the Cover of the August 2024 Applied Physics Letters journal issue. In this article, we demonstrate...
