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Austin selected for the SSDM 2021 Young Researcher Award. Congrats!

by H. Grace Xing | Feb 22, 2021 | News

http://www.ssdm.jp the SSDM2021 Young Researcher Award. This award is given to the outstanding papers presented at the previous year’s conference, authored by young researchers aged 33 years old or younger.

John receives the 2020 IEEE SISC Ed Nicollian Award. Congrats!

by H. Grace Xing | Feb 22, 2021 | News

https://www.ieeesisc.org This year’s SISC will continue the tradition of presenting an award memorializing Prof. E. H. Nicollian. The award will be given for the best student presentation. Ed Nicollian was a pioneer in the exploration of metal oxide...

Wenshen won a Best Student Presentation Award at EMC 2020. Congrats!

by H. Grace Xing | Feb 10, 2021 | News

Wenshen has been a runner up at a number of international conferences in the past few years.  We are glad for Wenshen’s winning of an EMC Student Award!  By the time of graduation, Wenshen published 10 first-authored journal papers including 6 featured articles,...

Wenshen answers “thermionic or tunneling? The universal transition electric field in ideal Schottky barrier diodes”

by H. Grace Xing | Feb 10, 2021 | News

Ideal Schottky barrier diode is an extremely well studied topic in the past 70 years!  What’s new in Wenshen’s discovery in 2020?  It turned out that the carrier transport region dominated by both thermionic emission and tunneling is relatively murky....

Austin and Reet were featured in the Cornell Engineering Entrepreneurs article

by H. Grace Xing | Feb 10, 2021 | News

Austin and Reet, currently in their final year to their PhD degree, have credited the Commercialization Fellow program, the NSF I-Corp program, the Scale Up and Prototyping program, the CTAM (now IGNITE) program, the Praxis Center for Venture Development and other...

Kazuki presented at IEDM 2020 world-record p-channel GaN FETs, moving the bar up by 40X!

by H. Grace Xing | Feb 3, 2021 | News

These p-channel GaN FETs boast a current density of >420 mA/mm and a speed of ~20 GHz.  For the first time, it is possible to design a circuit with hole-conducting transistor in GaN!  The secret ingredient lies in the “high-mobility” 2D hole gas...
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Recent Posts

  • Muhaimin Mareum Khan receives Best Poster Award at the CNF Annual Meeting
  • Cornell upgrades lab with MOCVD system for next-gen nitride materials
  • Aluminum nitride transistor advances next-gen RF electronics
  • Professor Xing honored by SIA/SRC for excellence in semiconductor research
  • Chandrashekhar Savant wins TECHCON 2025 Top 10 Best Student Presenter Award
Kavli Institute at Cornell
Cornell University School of Electrical and Computer Engineering
Cornell University Department of Materials Science Engineering
Cornell University Department of Materials Science and Engineering
Cornell University School of Electrical and Computer Engineering

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