by H. Grace Xing | Feb 3, 2021 | News
These p-channel GaN FETs boast a current density of >420 mA/mm and a speed of ~20 GHz. For the first time, it is possible to design a circuit with hole-conducting transistor in GaN! The secret ingredient lies in the “high-mobility” 2D hole gas...
by H. Grace Xing | Feb 3, 2021 | News
https://recognition.webofscience.com/awards/highly-cited/2020/
by H. Grace Xing | Jan 25, 2021 | News
“The path that leads to the next generation of high-power electronics is not long. But it needs to be wide. Very wide.” Cornell Chronicle article Publication in Science Advances: Crystal orientation dedicated epitaxy of ultra wide bandgap 5.4-8.6 eV...
by H. Grace Xing | Jan 25, 2021 | News
Undergraduate Scholarships/Graduate...
by Len Hendrikus van Deurzen | Dec 26, 2020 | News
Combined, the Jena-Xing group published over 35+ peer-reviewed articles this year!
by Barbara Woods Walpole | Sep 26, 2019 | News
Prof. Xing is elected as a Fellow of the American Physical Society. https://news.cornell.edu/stories/2019/09/three-faculty-elected-fellows-american-physical-society
