by H. Grace Xing | Feb 10, 2021 | News
Austin and Reet, currently in their final year to their PhD degree, have credited the Commercialization Fellow program, the NSF I-Corp program, the Scale Up and Prototyping program, the CTAM (now IGNITE) program, the Praxis Center for Venture Development and other...
by H. Grace Xing | Feb 3, 2021 | News
These p-channel GaN FETs boast a current density of >420 mA/mm and a speed of ~20 GHz. For the first time, it is possible to design a circuit with hole-conducting transistor in GaN! The secret ingredient lies in the “high-mobility” 2D hole gas...
by H. Grace Xing | Feb 3, 2021 | News
https://recognition.webofscience.com/awards/highly-cited/2020/
by H. Grace Xing | Jan 25, 2021 | News
“The path that leads to the next generation of high-power electronics is not long. But it needs to be wide. Very wide.” Cornell Chronicle article Publication in Science Advances: Crystal orientation dedicated epitaxy of ultra wide bandgap 5.4-8.6 eV...
by H. Grace Xing | Jan 25, 2021 | News
Undergraduate Scholarships/Graduate...
