by H. Grace Xing | Feb 10, 2021 | News
Ideal Schottky barrier diode is an extremely well studied topic in the past 70 years! What’s new in Wenshen’s discovery in 2020? It turned out that the carrier transport region dominated by both thermionic emission and tunneling is relatively murky....
by H. Grace Xing | Feb 10, 2021 | News
Austin and Reet, currently in their final year to their PhD degree, have credited the Commercialization Fellow program, the NSF I-Corp program, the Scale Up and Prototyping program, the CTAM (now IGNITE) program, the Praxis Center for Venture Development and other...
by H. Grace Xing | Feb 3, 2021 | News
These p-channel GaN FETs boast a current density of >420 mA/mm and a speed of ~20 GHz. For the first time, it is possible to design a circuit with hole-conducting transistor in GaN! The secret ingredient lies in the “high-mobility” 2D hole gas...
by H. Grace Xing | Feb 3, 2021 | News
https://recognition.webofscience.com/awards/highly-cited/2020/
by H. Grace Xing | Jan 25, 2021 | News
“The path that leads to the next generation of high-power electronics is not long. But it needs to be wide. Very wide.” Cornell Chronicle article Publication in Science Advances: Crystal orientation dedicated epitaxy of ultra wide bandgap 5.4-8.6 eV...
