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GaN epi-wafers for vertical high-power devices grown by vapor phase epitaxy on lowcost, high-quality ammonothermal GaN substrates

GaN electronics

Program: Strategies for wide-bandgap inexpensive transistors for controlling high efficiency systems (SWITCHES)

Skills

Advanced Research Program Agency - Energy (ARPA-E)

Posted on

January 11, 2018

← Chemically functionalized graphene as high performance heat spreader PolarJFET: a novel vertical GaN power transistor concept →

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Kavli Institute at Cornell
Cornell University School of Electrical and Computer Engineering
Cornell University Department of Materials Science Engineering
Cornell University Department of Materials Science and Engineering
Cornell University School of Electrical and Computer Engineering

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