News
8/2012: Rusen, stationed at NIST, has added an exciting twist using graphene for a well-established technique: Internal Photoemission (IPE).
Here is a news release from NIST. http://www.nist.gov/pml/div683/graphene_characterization.cfm
6/2012: Bo presented a DRC late news on ft/fmax of 225/250 GHz Emode GaN HEMTs in collaboration with Triquint Semiconductor.
6/2012: Bo presented a DRC late news on ft/fmax of 225/250 GHz Emode GaN HEMTs in collaboration with Triquint Semiconductor.
6/2012: Berardi’s abstract to IRMMW-THz has been accepted and upgraded to an invited talk.
6/2012: Berardi's abstract to IRMMW-THz has been accepted and upgraded to an invited talk.
6/2012: News release on Yuanzheng’s 370 GHz GaN HEMTs.
http://www.semiconductor-today.com/news_items/2012/JUNE/UND_180612.html
4/2012: Guowang’s first strained GaN QW HEMTs were covered by Semiconductor Today.
http://www.semiconductor-today.com/news_items/2012/APRIL/UND_110412.html
4/2012: Dr. Kazuki Nomoto from Japan, Mingda Zhu joined our group.
4/2012: Dr. Kazuki Nomoto from Japan, Mingda Zhu joined our group.
4//2012: Berardi’s graphene THz modulator work appeared on line in Nature Communications.
Here is the Notre Dame news release: Another one from online: http://newsinfo.nd.edu/news/30537-graphene-based-terahertz-devices-the-wave-of-the-future/ US Navy Rides the Terahertz Wave to Next-Gen Electronics
4/2012: Rusen’s APL paper on band alignment of graphene/SiO2/Si determined by IPE is accepted.
4/2012: Rusen's APL paper on band alignment of graphene/SiO2/Si determined by IPE is accepted.
3/2012: Yuanzheng claimed record high ft in GaN HEMTs: 370 GHz ft. EDL will appear soon.
3/2012: Yuanzheng claimed record high ft in GaN HEMTs: 370 GHz ft. EDL will appear soon.
3/2012: Tian graduated with his PhD and joined First Solar, Toledo.
3/2012: Tian graduated with his PhD and joined First Solar, Toledo.
1/2012: Vishwanath joined the group.
1/2012: Vishwanath joined the group.
10/2011: Yuping Zeng, postdoctoral researcher, joins the group from ETH. Welcome!
10/2011: Yuping Zeng, postdoctoral researcher, joins the group from ETH. Welcome!
9/2011: Berardi’s APL paper on graphene-based THz modulator has been selected by AIP as research highlight! Marvelous!
http://www.aip.org/aip/research/PNH-9-12-2011.html
8/2011: Guangle’s EDL on TFETs will appear soon online.
It is the first journal paper from UND on experimental demonstration of TFETs, support by the MIND Center. Great job!
8/2011: Ronghua’s fourth paper this year has just appeared in APEX, and is being promoted to the Open Access Article of the Month. Excellent!
8/2011: Ronghua's fourth paper this year has just appeared in APEX, and is being promoted to the Open Access Article of the Month. Excellent!
7/2011: Guangle is spending two months at IBM, Zurich, for internship this summer. Have fun!
7/2011: Guangle is spending two months at IBM, Zurich, for internship this summer. Have fun!
7/2011: Graduate Student Bo Song joins the group from Zhejiang University. Welcome aboard!
7/2011: Graduate Student Bo Song joins the group from Zhejiang University. Welcome aboard!
7/2011: Teamed up with Teledyne Scientific, we have been selected to develop high frequency power switching devices using GaN under the DARPA MPC program.
7/2011: Teamed up with Teledyne Scientific, we have been selected to develop high frequency power switching devices using GaN under the DARPA MPC program.
7/2011: Ronghua’s 220 GHz quaternary barrier GaN HEMTs was highlighted online by Semiconductor Today in July.
http://www.semiconductor-today.com/news_items/2011/JULY/KOPIN_080711.html
6/2011: Ronghua’s 4TH EDL, 220-GHz InAlGaN HEMTs, will appear soon online. Keep going!
6/2011: Ronghua's 4TH EDL, 220-GHz InAlGaN HEMTs, will appear soon online. Keep going!
6/2011: Ronghua, Tian and Guangle present work on GaN HEMTs and Tunnel FETs at DRC (Santa Barbara). Good job!
6/2011: Ronghua, Tian and Guangle present work on GaN HEMTs and Tunnel FETs at DRC (Santa Barbara). Good job!
6/2011: UND lead team has been awarded to develop GaN based THz amplifiers under an ONR/MURI Program.
6/2011: UND lead team has been awarded to develop GaN based THz amplifiers under an ONR/MURI Program.
5/2011: Tom Zimmermann has decided to join Fraunhofer Institute – Duisburg. Congrats!
5/2011: Tom Zimmermann has decided to join Fraunhofer Institute – Duisburg. Congrats!
5/2011: Ronghua’s 3rd EDL, addressing a critical issue on GaN HEMT passivation, will appear soon online. Fabulous!
5/2011: Ronghua's 3rd EDL, addressing a critical issue on GaN HEMT passivation, will appear soon online. Fabulous!
5/2011: Jia’s work MBE regrown ohmic contacts for InAIN HEMTs is finally appearing on PSS(a).
Good, but a slow process. (submitted last October)