Jena-Xing Laboratory
  • Home
  • Publications
  • News
  • Facilities
  • People
  • Research
  • Teaching
  • Prospective Students
  • Contact/Calendar
Select Page

Wenshen explains how to best activate a buried p-type GaN layer doped with Mg!

by Barbara Woods Walpole | Sep 26, 2018 | News

The Mg acceptors in a GaN:Mg layer grown in the presence of hydrogen are often passivated by H therefore can’t release mobile holes.  It is particularly difficult to break the Mg-H bond and let the H atoms out if GaN:Mg is buried under n-type layers....

(Utah) Hugo’s work on THz-2DEG coupling is featured on the cover of J. of Applied Physics

by Barbara Woods Walpole | Sep 26, 2018 | News

Terahertz electromagnetic waves can interact with 2DEG strongly due to the match between the wave frequency and the electron scattering time.  Should you design coupled or synchronized 2DEG oscillators to maximize coupling?...

Editor’s pick: Zongyang illustrates the breakdown mechanism in Ga2O3 Fin power transistors!

by Barbara Woods Walpole | Sep 26, 2018 | News

Fin transistors are often used in logic devices for their efficient gate-control of the channel.  What if you add a lightly-doped drift region between the gate and the drain?  Do you end up with an equivalent fin-LDMOS?...

The Jena-Xing group wins Best Student Paper Awards at the Compound Semiconductor Week (CSW) 2018

by Barbara Woods Walpole | Aug 2, 2018 | News

Congratulations to Shyam and Wenshen for winning a Best Student Paper and a Honorable Mention! http://www.ece.cornell.edu/news/index.cfm?news_id=96616

Prof. Xing leads a team of faculty to invent new memories.

by Barbara Woods Walpole | May 18, 2018 | News

Re-imagining Computer System Memories: Prof. Xing is leading an interdisciplinary team spanning materials, devices, circuits, and architectures to realize a memory and paradigm shift in memory-processing...

Congratulations to Zongyang and the power team to report the first kV Ga2O3 E-mode transistors!

by Barbara Woods Walpole | May 18, 2018 | News

http://news.cornell.edu/stories/2018/06/vertical-gallium-oxide-transistor-high-power-efficiencyZongyang and the power team report the first kV Ga2O3 E-mode transistors! High-voltage gallium oxide transistors with more than 1kV breakdown:   Cornell News...
« Older Entries
Next Entries »

Recent Posts

  • Prof. Amano returns to Cornell as a Mary Upson Visiting Professor
  • Another Successful Year: View our 2024 Newsletter Here
  • Kathryn Zhang (SUPREME UG Microelectronics Fellow; ECE BS’24, MEng’24) joining TSMC, Kathleen Smith (AEP, PhD’24) joining ASM
  • Kathleen Tyrie Smith Reports < 0.1 Ω-mm Ohmic Contacts on β-Ga2O3 & weak Fermi level pinning - Editor's Pick
  • Professor Jena receives the Michael Tien ’72 teaching award
Kavli Institute at Cornell
Cornell University School of Electrical and Computer Engineering
Cornell University Department of Materials Science Engineering
Cornell University Department of Materials Science and Engineering
Cornell University School of Electrical and Computer Engineering

C2D2

C2D2-logotype
Kavli Institute at Cornell
  • Facebook
  • X