by Barbara Woods Walpole | Nov 21, 2018 | News
There are very few wide bandgap semiconductors (>3 eV) to show hole conduction with decent mobilities. Polarization-doped holes at the GaN/AlN interface makes it possible to work around the deep acceptors in a field effect transistor. Check out Sam’s hard work!...
by Barbara Woods Walpole | Nov 21, 2018 | News
Reverse-biased Schottky barrier diodes often suffer from high leakage current due to field-enhanced thermionic emission. Check out how Wenshen reduces the electric field at the metal-Ga2O3 junction to achieve extremely low leakage current at kV....
by Barbara Woods Walpole | Nov 21, 2018 | News
Prof. Jena and Prof. Xing elected endowed chairs. Congrats! https://www.ece.cornell.edu/news/jena-xing-and-zhao-elected-endowed-chairs
by Barbara Woods Walpole | Nov 21, 2018 | News
Congrats to Kevin and all co-authors who contributed to the buried tunnel junction project!
by Barbara Woods Walpole | Oct 3, 2018 | News
The Jena-Xing Group at Cornell University is seeking a Research Associate scholar to work on molecular beam epitaxy (MBE) of various compound semiconductors, which include nitrides, arsenides, oxides, layered and functional materials and their heterostructures. Find...
by Barbara Woods Walpole | Sep 26, 2018 | News
The Mg acceptors in a GaN:Mg layer grown in the presence of hydrogen are often passivated by H therefore can’t release mobile holes. It is particularly difficult to break the Mg-H bond and let the H atoms out if GaN:Mg is buried under n-type layers....
