by Barbara Woods Walpole | Sep 26, 2018 | News
The Mg acceptors in a GaN:Mg layer grown in the presence of hydrogen are often passivated by H therefore can’t release mobile holes. It is particularly difficult to break the Mg-H bond and let the H atoms out if GaN:Mg is buried under n-type layers....
by Barbara Woods Walpole | Sep 26, 2018 | News
Terahertz electromagnetic waves can interact with 2DEG strongly due to the match between the wave frequency and the electron scattering time. Should you design coupled or synchronized 2DEG oscillators to maximize coupling?...
by Barbara Woods Walpole | Sep 26, 2018 | News
Fin transistors are often used in logic devices for their efficient gate-control of the channel. What if you add a lightly-doped drift region between the gate and the drain? Do you end up with an equivalent fin-LDMOS?...
by Barbara Woods Walpole | Aug 2, 2018 | News
Congratulations to Shyam and Wenshen for winning a Best Student Paper and a Honorable Mention! http://www.ece.cornell.edu/news/index.cfm?news_id=96616
by Barbara Woods Walpole | May 18, 2018 | News
Re-imagining Computer System Memories: Prof. Xing is leading an interdisciplinary team spanning materials, devices, circuits, and architectures to realize a memory and paradigm shift in memory-processing...
by Barbara Woods Walpole | May 18, 2018 | News
http://news.cornell.edu/stories/2018/06/vertical-gallium-oxide-transistor-high-power-efficiencyZongyang and the power team report the first kV Ga2O3 E-mode transistors! High-voltage gallium oxide transistors with more than 1kV breakdown: Cornell News...
