by Barbara Woods Walpole | Dec 19, 2018 | News
Okan’s recent work (Rana group) is featured by Scilight: how defects in Ga2O3 potential impact breakdown of the material. Role of defect states in high bandgap gallium oxide identified using two-color spectroscopy
by Barbara Woods Walpole | Nov 21, 2018 | News
There are very few wide bandgap semiconductors (>3 eV) to show hole conduction with decent mobilities. Polarization-doped holes at the GaN/AlN interface makes it possible to work around the deep acceptors in a field effect transistor. Check out Sam’s hard work!...
by Barbara Woods Walpole | Nov 21, 2018 | News
Reverse-biased Schottky barrier diodes often suffer from high leakage current due to field-enhanced thermionic emission. Check out how Wenshen reduces the electric field at the metal-Ga2O3 junction to achieve extremely low leakage current at kV....
by Barbara Woods Walpole | Nov 21, 2018 | News
Prof. Jena and Prof. Xing elected endowed chairs. Congrats! https://www.ece.cornell.edu/news/jena-xing-and-zhao-elected-endowed-chairs
by Barbara Woods Walpole | Nov 21, 2018 | News
Congrats to Kevin and all co-authors who contributed to the buried tunnel junction project!
by Barbara Woods Walpole | Oct 3, 2018 | News
The Jena-Xing Group at Cornell University is seeking a Research Associate scholar to work on molecular beam epitaxy (MBE) of various compound semiconductors, which include nitrides, arsenides, oxides, layered and functional materials and their heterostructures. Find...
