by Barbara Woods Walpole | Mar 15, 2019 | News
Jimy reports on how polarization field inherent in III-nitride semiconductors breaks symmetry in characteristics of GaN RTDs! https://journals.aps.org/prapplied/abstract/10.1103/PhysRevApplied.11.034032
by Barbara Woods Walpole | Mar 15, 2019 | News
Remember to perform error analysis for all studies! https://www.mrs.org/61st-emc/awards
by Barbara Woods Walpole | Jan 11, 2019 | News
Sam Bader reports record performance hole-conducting FETs in GaN! Featured by Semiconductor Today: Increasing current performance in III-nitride p-channel transistors
by Barbara Woods Walpole | Dec 19, 2018 | News
At IEDM 2018, Wenshen presented his record-performing Ga2O3 trench JBSDs, and our collaborators at Padova presented detailed avalanche behavior of GaN p-n diodes that are doped by polarization-induced bulk doping for the first time, designed and fabricated by Kazuki...
by Barbara Woods Walpole | Dec 19, 2018 | News
Okan’s recent work (Rana group) is featured by Scilight: how defects in Ga2O3 potential impact breakdown of the material. Role of defect states in high bandgap gallium oxide identified using two-color spectroscopy
