At IEDM 2018, Wenshen presented his record-performing Ga2O3 trench JBSDs, and our collaborators at Padova presented detailed avalanche behavior of GaN p-n diodes that are doped by polarization-induced bulk doping for the first time, designed and fabricated by Kazuki and Zongyang!
Recent Posts
- Muhaimin Mareum Khan receives Best Poster Award at the CNF Annual Meeting
- Cornell upgrades lab with MOCVD system for next-gen nitride materials
- Aluminum nitride transistor advances next-gen RF electronics
- Professor Xing honored by SIA/SRC for excellence in semiconductor research
- Chandrashekhar Savant wins TECHCON 2025 Top 10 Best Student Presenter Award