Bennett Cromer reports record >6 MV/cm Ga2O3 Schottky Diodes – JVST-A Editor’s Pick

Bennett Cromer, a 5th year PhD candidate in the Jena-Xing group, has dedicated his degree to the study of the wide bandgap material Ga₂O₃. Following in the footsteps of Dr. Wenshen Li and Mr. Devansh Saraswat who demonstrated a record 4.3 MV/cm Ga₂O₃ Schottky diode in 2020 (doi:10.1109/DRC50226.2020.9135177), Cromer et al. has demonstrated Ga₂O₃ Schottky diodes capable of withstanding electric fields up to 6.94 MV/cm nondestructively. Read more at https://doi.org/10.1116/6.0003468.