Reet and Sam report the first hole doping arising from symmetry breaking in GaN/AlN without impurity dopants. This phenomenon was first predicted by Cornell researchers about 20 years ago. The hunt for this hole gas is finally over; more fundamental physics and applications await!
News Release at Cornell: https://news.cornell.edu/stories/2019/09/discovery-gallium-nitride-key-enabler-energy-efficient-electronics
Publication online: https://science.sciencemag.org/content/365/6460/1454