National Science Foundation (NSF) Graphene-based electrically reconfigurable THz aperture arrays for imaging applications
National Science Fundation (NSF) 2D crystal semiconductors: electron transport and device applications
Office of Naval Research (ONR) III-N devices and architectures for terahertz electronics (DATE)
Semiconductor Research Corporation (SRC) LEAST: Center for low energy systems technology
National Science Fundation (NSF) MRI: Development of an apertureless near-field scanning optical and magneto-optical Kerr effect microscope for nano-science applications.
Semiconductor Research Corporation (SRC) Chemically functionalized graphene as high performance heat spreader
Advanced Research Program Agency – Energy (ARPA-E)
Program: Strategies for wide-bandgap inexpensive transistors for controlling high efficiency systems (SWITCHES) Title: GaN epi-wafers for vertical high-power devices grown by vapor phase epitaxy on lowcost, high-quality ammonothermal GaN substrates
Advanced Research Program Agency – Energy (ARPA-E)
Program: SWITCHES Title: PolarJFET: a novel vertical GaN power transistor concept
National Science Foundation (NSF)
EFRI-2DARE: Monolayer Heterostructures: Epitaxy to Beyond-CMOS Devices
Past Research Projects
National Science Foundation (NSF) MRI: Acquisition of Ultrafast Spectroscopy Instrumentation for Material Research and Education
Office of Naval Research (ONR) Polarization-doped GaN HBTs
Office of Naval Research/Defense Advanced Research Projects Agency (ONR/ DARPA) Ideal channel field effect transistors
Office of Naval Research (ONR) Nitride/Oxide multifunction materials: bridging the gap between materials and devices
University of Notre Dame (Faculty Research Program) Graphene nanoribbon-based FETs and gated RTTs for integrated high-speed RF devices and circuits
Air Force Office of Scientific Research (AFOSR) DURIP: Transport characterization system for electronic, optical & multifunctional materials and devices
Office of Naval Research/Defense Advanced Research Projects Agency (ONR/ DARPA) Ultrascaled AlN/GaN HEMT technology for mm-wave applications
Office of Naval Research (ONR)
AlGaAs/GaAs/GaN HBTs by wafer fusions
Nanoelectronic Research Initiative (NRI) MIND: Midwest Institute of Nanoelectronics Discovery (Phase 1.0)
National Science Foundation (NSF) Evaluation of nanoribbons for lateral bandgap engineering
Office of Naval Research (ONR) Engineering of oxide/nitride semiconductors (EONS)
Inlustra Technologies, Inc. Characterization of non-polar bulk GaN substrates (DoD STTR)
Air Force Office of Scientific Research (AFOSR) Stacked quantum wire AlN/GaN HEMTs
Air Force Office of Scientific Research (AFOSR) YIP: Quantum limits of AlN/GaN RF HEMTs
Defense Advanced Research Projects Agency (DARPA)
The Compact Mid-Ultraviolet Technology (CMUVT) program AlGaN MQW Mid UV LEDs over sapphire and bulk AlN
Office of Naval Research (ONR)
THz power sources based on negative differential resistance in GaN
National Science Foundation (NSF)
Nanoscale optoelectronics with polarization and bandgap engineered nitride nanowire/silicon heterostructures
Nanoelectronics Research Initiative (NRI) MIND: Midwest Institute of Nanoelectronics Discovery (Phase 1.5)
University of Notre Dame (Faculty Research Program)
A microfluidic approach of terahertz chemical and biological sensing
Air Force Office of Scientific Research (AFOSR)
DURIP: Complex oxide heterostructure physics by chemical beam epitaxy
National Institute Standard & Technology (NIST)
Internal Photoemission Spectroscopy
National Science Foundation (NSF)
A room temperature portable terahertz camera using zero bias Sb-based heterostructure backward diodes for imaging applications
Defense Advanced Research Projects Agency (DARPA)
The Microscale Power Conversion (MPC) Program
Defense Advanced Research Projects Agency (DARPA)
The Nitride Electronic NeXt-Generation Technology (NEXT) program
Ultrafast RF and mixed-signal electronics with ultra-scaled binary AlN/GaN HEMTs
National Science Foundation (NSF)
CAREER: Graphene and graphene nanoribbon optoelectronic properties and devices
Air Force Office of Scientific Research (AFOSR)
2D crystal semiconductors: new materials for GHz-THz devices
Agnitron Technology, Inc.
Radiation hard multi-channel AlN/GaN HEMT for high efficiency X- and Ka-band power
