“Cornell researchers have developed a new transistor architecture that could reshape how high-power wireless electronics are engineered, while also addressing supply chain vulnerabilities for a critical semiconductor material.
The device, called an XHEMT, includes an ultra-thin layer of gallium nitride built on bulk single-crystal aluminum nitride, a semiconductor material with low defect densities and an ultrawide bandgap – properties that allow it to withstand higher temperatures and voltages while reducing electrical losses.” Read More Here