These p-channel GaN FETs boast a current density of >420 mA/mm and a speed of ~20 GHz. For the first time, it is possible to design a circuit with hole-conducting transistor in GaN! The secret ingredient lies in the “high-mobility” 2D hole gas generated by the polarization discontinuity at GaN/AlN interface, which Reet and Sam reported in Science 2019.
Recent Posts
- Prof. Amano returns to Cornell as a Mary Upson Visiting Professor
- Another Successful Year: View our 2024 Newsletter Here
- Kathryn Zhang (SUPREME UG Microelectronics Fellow; ECE BS’24, MEng’24) joining TSMC, Kathleen Smith (AEP, PhD’24) joining ASM
- Kathleen Tyrie Smith Reports < 0.1 Ω-mm Ohmic Contacts on β-Ga2O3 & weak Fermi level pinning - Editor's Pick
- Professor Jena receives the Michael Tien ’72 teaching award