At IEDM 2018, Wenshen presented his record-performing Ga2O3 trench JBSDs, and our collaborators at Padova presented detailed avalanche behavior of GaN p-n diodes that are doped by polarization-induced bulk doping for the first time, designed and fabricated by Kazuki and Zongyang!
Recent Posts
- Prof. Amano returns to Cornell as a Mary Upson Visiting Professor
- Another Successful Year: View our 2024 Newsletter Here
- Kathryn Zhang (SUPREME UG Microelectronics Fellow; ECE BS’24, MEng’24) joining TSMC, Kathleen Smith (AEP, PhD’24) joining ASM
- Kathleen Tyrie Smith Reports < 0.1 Ω-mm Ohmic Contacts on β-Ga2O3 & weak Fermi level pinning - Editor's Pick
- Professor Jena receives the Michael Tien ’72 teaching award