At IEDM 2018, Wenshen presented his record-performing Ga2O3 trench JBSDs, and our collaborators at Padova presented detailed avalanche behavior of GaN p-n diodes that are doped by polarization-induced bulk doping for the first time, designed and fabricated by Kazuki and Zongyang!
Recent Posts
- Professor Xing receives the Michael Tien ’72 teaching award
- Akhansha Arvind, Chuan Chang, Mareum Khan won Best Lightning Talks at the 2025 SUPREME Annual Review
- Wenwen Zhao joins RPI as a tenure-track Assistant Professor
- Naomi Pieczulewski and Kathleen T. Smith report achieving consistently low contact resistance in non-alloyed Ti/Au ohmics to β-Ga2O3 – Editor’s pick & in Cornell Chronicle
- Chuan Chang receives award from EMC