Editor’s pick: Zongyang illustrates the breakdown mechanism in Ga2O3 Fin power transistors!

Fin transistors are often used in logic devices for their efficient gate-control of the channel.  What if you add a lightly-doped drift region between the gate and the drain?  Do you end up with an equivalent fin-LDMOS?

https://aip.scitation.org/doi/10.1063/1.5038105