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Zongyang Hu’s Paper Highlighted

Feb 25, 2016 | News

Figure 1: Schematic cross-sections of GaN p-n junction diodes: (left) without passivation/field plates and (right) with field plates.
Check out Zongyang Hu’s paper that’s been highlighted in Semiconductor Today and published in Applied Physics Letters!

Link: http://www.semiconductor-today.com/news_items/2015/dec/cornell_241215.shtml
Paper: https://djena.engineering.cornell.edu/papers/2015/apl15_zongyang_gan_ideal_pn_diode.pdf

Kavli Institute at Cornell
Cornell University Department of Materials Science Engineering
Cornell University School of Electrical and Computer Engineering
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