Work by Zongyang Hu highlighted!

Feb 25, 2016 | News

A state-of-the-art design of GaN p-n junction diodes that has resulted in near-unity ideality factor, avalanche breakdown capability, and record-breaking power performance. Insets show a GaN p-n diode fabricated on a high-quality bulk GaN substrate and light emission from the junction under forward bias. CREDIT: Zongyang Hu

Highlighted by Applied Physics Letters, Zongyang Hu’s work on Building blocks for GaN power switches can be found here:

https://www.aip.org/publishing/journal-highlights/building-blocks-gan-power-switches