Check out Reet’s website to see what he has been working on at Cornell.

“I use careful heterostructure design and crystal growths to make high-performance electron- and hole-channel transistors on AlN. A major highlight has been my discovery of the long-missing undoped GaN/AlN 2D holes, which enabled the p-channel III-nitride transistors to break the GHz-speed barrier.

I have co-authored 20+ peer-reviewed journal articles, 20+ conference presentations, 6 invited talks and 4 patents during the course of my PhD. I also co-founded an early-stage start-up Soctera Inc. to commercialize my research on aluminium-nitride (AlN) based high-power RF transistors, performing extensive customer discovery and securing small-business funding from the National Science Foundation.”